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 NTE2102 Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns
Description: The NTE2101 is a high-speed 1024 x 1 bit static random access read/write memory in a 16-Lead DIP type package designed using N-Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N-Channel technology allows complete DTL/TTL compatibility of all inputs and outputs as well as a single 5V supply. The separate chip enable input (CE) controlling the output allows easy memory expansion by OR-tying individual devices to a data bus. Data in and data out have the same polarity. Features: D Single 5V Supply D All Inputs and Outputs Directly DTL/TTL Compatible D Static Operation - No Clocks or Refresh D All Inputs Protected Against Static Charge D 350ns Access Time Absolute Maximum Ratings: (Note 1) Voltage at Any Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5V to +7V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300C Note 1. "Absolute Maximum Ratings" are those values beyond which the device may be permanently damaged. They do not mean the device may be operated at these values. Recommended Operating Conditions:
Parameter Supply Voltage Operating Ambient Temperature Input Low Voltage Input High Voltage Symbol VCC TA VIL VIH Test Conditions Min 4.75 0 -0.5 2.0 Typ - - - - Max 5.25 +70 0.8 VCC Unit V C V V
DC Electrical Characteristics: (TA = 0 to +70C, VCC = 5V 5% unless otherwise specified)
Parameter Input Load Current Output Leakage Current, High Output Leakage Current, Low Power Supply Current Power Supply Amp Output Low Voltage Output High Voltage Symbol ILI ILOH ILOL ICC ICC VOL VOH Test Conditions VIN = 0 to 5.25V CE = 2V, VOUT = 2.4V CE = 2V, VOUT = 0.4V All Inputs = 5.25V, Data Output Open, TA = +25C All Inputs = 5.25V, Data Output Open, TA = 0C IOL = 3.2mA IOH = -200A Min - - - - - - 2.4 Typ - - - - - - - Max Unit 10 5 -10 45 50 0.4 - A A A mA mA V V
AC Electrical Characteristics (With Standard Load): (TA = 0 to +70C, VCC = 5V 5% unless otherwise specified)
Parameter Read Cycle Read Cycle Access Time Chip Enable to Output Time Previous Read Data Valid with Respect to Address Previous Read Data Valid with Respect to Chip Enable Write Cycle Write Cycle Address to Write Set-Up Write Pulse Width Write Recovery Time Data Set-Up Time Data Hold Time Chip Enable to Write Set-Up tWC tAW tWP tWR tDW tDH tCW 350 20 150 0 125 0 150 - - - - - - - - - - - - - - ns ns ns ns ns ns ns tRC tA tCO tOH1 tOH2 350 - - 40 0 - - - - - - 350 150 - - ns ns ns ns ns Symbol Test Conditions Min Typ Max Unit
AC Electrical Characteristis: (TA = +25C, f = 1MHz unless otherwise specified)
Parameter Capacitance Input Capacitance Output Capacitance CIN COUT All Inputs VIN = 0V VO = 0V - - 3 4 5 6 pF pF Symbol Test Conditions Min Typ Max Unit
Standby Characteristics: (TA = 0 to +70C, Note 2 unless otherwise specified)
Parameter VCC in Standby CE Bias in Standby Symbol VPD VCES 2 VPD VCCmax 1.5 VPD 2 Test Conditions Min 1.5 2.0 VPD Typ - - - Max - - - Unit V V V
Note 2. Typical values at TA = +25C.
Standby Characteristics (Cont'd): (TA = 0 to +70C, Note 2 unless otherwise specified)
Parameter Standby Current Symbol IPD tCP tR Note 3 Test Conditions All Inputs = VPD = 1.5V All Inputs = VPD = 2V Chip Deselect to Standby Time Recovery Time Min - - 0 tRC Typ - - - - Max 28 38 - - Unit mA mA ns ns
Note 2. Typical values at TA = +25C. Note 3. tR = tRC = Read Cycle Time.
Pin Connection Diagram
A6 1 A5 2 R/W 3 A1 4 A2 5 A3 6 A4 7 A0 8
16 A7 15 A8 14 A9 13 CE 12 Data Out 11 Data In 10 VCC 9 GND
16
9
1
8
.870 (22.0) Max .200 (5.08) Max
.260 (6.6) Max
.100 (2.54) .700 (17.78)
.099 (2.5) Min


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